CMLD2004G surface mount silicon dual, isolated high voltage switching diode description: the central semiconductor CMLD2004G contains two (2) isolated high voltage silicon switching diodes, manufactured by the epitaxial planar process, epoxy molded in an sot-563 surface mount package. these devices are designed for applications requiring high voltage capability. marking code: dg sot-563 case maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 240 v peak repetitive reverse voltage v rrm 300 v peak repetitive reverse current i o 200 ma continuous forward current i f 225 ma peak repetitive forward current i frm 625 ma peak forward surge current, tp=1.0s i fsm 4.0 a peak forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =240v 100 na i r v r =240v, t a =150c 100 a bv r i r =100a 300 v v f i f =100ma 1.0 v c j v r =0, f=1.0mhz 5.0 pf t rr i f =i r =30ma, i rr =3.0ma, r l =100 50 ns r1 (17-january 2014) www.centralsemi.com
CMLD2004G surface mount silicon dual, isolated high voltage switching diode lead code: 1) anode d1 2) nc 3) anode d2 4) cathode d2 5) nc 6) cathode d1 marking code: dg sot-563 case - mechanical outline pin configuration www.centralsemi.com r1 (17-january 2014)
|
